Revolutionary Transistor: Nanosecond Switching Speeds and Unmatched Durability

Researchers have developed a new transistor using ultrathin boron nitride that can switch charges in nanoseconds and endure over 100 billion cycles without degrading. This innovation promises high-speed, energy-efficient electronics and denser memory storage. The material’s ferroelectric properties enable rapid charge switching without wear, making it a potential game-changer for future technology. Published in Science on June 6, the research faces manufacturing challenges but holds great promise.